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| MMBTA70LT1G General Purpose Transistor PNP Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VEBO IC Value -40 -4.0 -100 Unit Vdc Vdc mAdc 1 BASE COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 Unit mW mW/C C/W 1 2 EMITTER 3 RqJA PD 2 300 2.4 RqJA TJ, Tstg 417 -55 to +150 mW mW/C C/W C SOT-23 (TO-236) CASE 318 STYLE 6 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M2C M G G 1 M2C = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBTA70LT1G Package Shipping SOT-23 3,000 / Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2009 August, 2009 - Rev. 3 1 Publication Order Number: MMBTA70LT1/D MMBTA70LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = -100 mAdc, IC = 0) Collector Cutoff Current (VCB = -30 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = -5.0 mAdc, VCE = -10 Vdc) Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -5.0 mAdc, VCE = -10 Vdc, f = 100 MHz) Output Capacitanc (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) fT Cobo 125 - - 4.0 MHz pF hFE VCE(sat) 40 - 400 -0.25 - Vdc V(BR)CEO V(BR)EBO ICBO -40 -4.0 - - - -100 Vdc Vdc nAdc Symbol Min Max Unit TYPICAL NOISE CHARACTERISTICS (VCE = - 5.0 Vdc, TA = 25C) 10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 mA 30 mA 3.0 2.0 1.0 mA 100 mA 300 mA BANDWIDTH = 1.0 Hz RS 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 mA 100 mA 30 mA 10 mA IC = 1.0 mA BANDWIDTH = 1.0 Hz RS Figure 1. Noise Voltage Figure 2. Noise Current http://onsemi.com 2 MMBTA70LT1G NOISE FIGURE CONTOURS (VCE = - 5.0 Vdc, TA = 25C) 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) BANDWIDTH = 1.0 Hz Figure 3. Narrow Band, 100 Hz Figure 4. Narrow Band, 1.0 kHz 1.0 M 500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 10 Hz to 15.7 kHz Noise Figure is Defined as: NF + 20 log10 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (mA) en2 ) 4KTRS ) In 2RS2 1 2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms) Figure 5. Wideband http://onsemi.com 3 MMBTA70LT1G TYPICAL STATIC CHARACTERISTICS 400 TJ = 125C 25C h FE, DC CURRENT GAIN 200 - 55C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 6. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TA = 25C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA IC, COLLECTOR CURRENT (mA) 100 TA = 25C PULSE WIDTH = 300 ms 80 DUTY CYCLE 2.0% 300 mA 60 IB = 400 mA 350 mA 250 mA 200 mA 150 mA 0.6 0.4 40 100 mA 50 mA 0.2 20 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 7. Collector Saturation Region Figure 8. Collector Characteristics TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 V, TEMPERATURE COEFFICIENTS (mV/ C) 1.4 1.6 *APPLIES for IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 - 55C to 25C 0.8 25C to 125C 1.6 qVB for VBE 0.2 - 55C to 25C 25C to 125C 2.4 0.1 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 9. "On" Voltages Figure 10. Temperature Coefficients http://onsemi.com 4 MMBTA70LT1G TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25C 1000 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 -1.0 ts VCC = - 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C t, TIME (ns) tf 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 11. Turn-On Time f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) Figure 12. Turn-Off Time 500 TJ = 25C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF) 10 TJ = 25C 7.0 Cib 5.0 3.0 2.0 Cob 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current-Gain -- Bandwidth Product Figure 14. Capacitance 20 10 hie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hfe 200 @ IC = -1.0 mA hoe, OUTPUT ADMITTANCE ( m mhos) VCE = -10 Vdc f = 1.0 kHz TA = 25C 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C hfe 200 @ IC = 1.0 mA Figure 15. Input Impedance Figure 16. Output Admittance http://onsemi.com 5 MMBTA70LT1G 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 P(pk) 0.02 0.01 t1 SINGLE PULSE t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 Figure 18. DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZqJA(t) = r(t) * RqJA TJ(pk) - TA = P(pk) ZqJA(t) 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k Figure 17. Thermal Response 104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 10-1 10-2 ICEO DESIGN NOTE: USE OF THERMAL RESPONSE DATA ICBO AND ICEX @ VBE(off) = 3.0 V -4 0 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (C) Figure 19. Typical Collector Leakage Current A train of periodical power pulses can be represented by the model as shown in Figure 18. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 17 by the steady state value RqJA. Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88C. For more information, see AN-569. http://onsemi.com 6 MMBTA70LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D SEE VIEW C 3 E 1 2 HE c e b q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 MMBTA70LT1/D |
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